K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 2

• Manufacturer Part Number: K9K1208Q0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9K1208Q0C
K9K1208D0C
K9K1208U0C
Document Title
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
Revision No.
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
2.6
2.7
2.8
2.9
3.0
History
1. tREA value of 1.8V device is changed.
2. Errata is deleted.
1. Command table is edited.
2. AC parameters are changed.
K9K12XXU0C
K9K12XXD0C
K9K12XXQ0C
1. AC parameters are changed.
K9K1208Q0C
K9K1216Q0C
1. The Test Condition for Stand-by Currents are changed.
I
ISB2:
1. NAND Flash Technical Notes is changed.
2. TBGA->FBGA
SB
K9K12XXQ0C : tREA 30ns --> 35ns
-Invalid block -> initial invalid block ( page 14 )
-Error in write or read operation ( page 15 )
-Program Flow Chart ( page 15 )
1: CE=V
CE=V
K9K1216Q0C
K9K1216D0C
K9K1216U0C
IH
CC
, WP=0V/V
-0.2, WP=0V/V
tWC tWH tWP tRC tREH tRP tREA tCEA
tWC tWH tWP tRC tREH tRP tREA tCEA
50
60
50
60
CC
15
20
15
20
-->> CE=V
CC
25
40
25
40
-->> CE=V
50
60
50
60
IH
, WP=LOCKPRE=0V/V
15
20
15
20
CC
-0.2, WP=LOCKPRE=0V/V
25
40
25
40
2
35
40
30
40
45
55
45
55
CC
CC
Draft Date
Aug. 20th. 2003
Oct. 28th. 2003
Dec. 17th. 2003
Apr. 22th 2004
Oct. 25th. 2004
FLASH MEMORY
Remark