K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 3

• Manufacturer Part Number: K9K1208Q0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9K1208Q0C
K9K1208D0C
K9K1208U0C
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
PRODUCT LIST.
FEATURES
• Voltage Supply
• Organization
• Automatic Program and Erase
• Page Read Operation
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9K12XXX0C is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V,
3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can
be performed in typical 200µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed
in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(K9K1216Q0C :
60ns) cycle time per byte (X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well
as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required,
and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K12XXX0C′s extended
reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9K12XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
- Memory Cell Array
- Data Register
- Page Program
- Block Erase :
- Page Size
- Random Access
- Serial Page Access : 50ns(Min.)*
- 1.8V device(K9K12XXQ0C) : 1.70~1.95V
- 2.65V device(K9F12XXD0C) : 2.4~2.9V
- 3.3V device(K9K12XXU0C) : 2.7 ~ 3.6 V
- X8 device(K9K1208X0C) : (64M + 2048K)bit x 8 bit
- X16 device(K9K1216X0C) : (32M + 1024 K)bit x 16bit
- X8 device(K9K1208X0C) : (512 + 16)bit x 8bit
- X16 device(K9K1216X0C) : (256 + 8)bit x16bit
- X8 device(K9K1208X0C) : (512 + 16)Byte
- X16 device(K9K1216X0C) : (256 + 8)Word
- X8 device(K9K1208X0C) : (16K + 512)Byte
- X16 device(K9K1216X0C) : ( 8K + 256)Word
- X8 device(K9K1208X0C) : (512 + 16)Byte
- X16 device(K9K1216X0C) : (256 + 8)Word
K9K1208Q0C-G,J
K9K1216Q0C-G,J
K9K1208D0C-G,J
K9K1216D0C-G,J
K9K1208U0C-G,J
K9K1216U0C-G,J
*K9K1216Q0C : 60ns(Min.)
Part Number
: 10µs(Max.)
K9K1216Q0C
K9K1216D0C
K9K1216U0C
1.70 ~ 1.95V
2.4 ~ 2.9V
2.7 ~ 3.6V
Vcc Range
3
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
• Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
- K9K12XXX0C-GCB0/GIB0
- K9K12XXX0C-JCB0/JIB0
63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm)
63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm)
- Pb-free Package
Organization
X16
X16
X16
X8
X8
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
FBGA