K9K1G08U0B Samsung semiconductor, K9K1G08U0B Datasheet - Page 11

• Manufacturer Part Number: K9K1G08U0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

AC TEST CONDITION
(K9K1G08X0B-XCB0 :TA=0 to 70°C, K9K1G08X0B-XIB0 :TA=-40 to 85°C
Capacitance
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program / Erase Characteristics
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9K1G08R0B:Output Load (Vcc
K9K1G08B0C:Output Load (Vcc
K9K1G08U0B:Output Load (Vcc
K9K1G08U0B:Output Load (Vcc
K9K1G08R0B : Vcc=1.65V~1.95V , K9K1G08B0B : Vcc=2.5V~2.9V, K9K1G08U0B : Vcc=2.7V~3.6V unless otherwise noted)
NOTE : 1.Typical program time is defined as the time within which more than 50% of the whole pages are programmed at Vcc of 3.3V and 25’C
Input/Output Capacitance
Input Capacitance
Program Time
Dummy Busy Time for Multi Plane Program
Number of Partial Program Cycles
in the Same Page
Block Erase Time
CLE
H
H
X
X
X
X
X
L
L
L
L
2. WP should be biased to CMOS high or CMOS low for standby.
ALE
X
H
H
X
X
X
X
L
L
L
L
Item
(1)
(
T
IL
Parameter
A
or V
=25°C, V
CE
X
X
X
X
H
L
L
L
L
L
L
IH.
Parameter
WE
CC
H
X
X
X
X
X
Q
Q
Q
Q
:1.8V +/-10%)
:2.7V +/-10%)
:3.0V +/-10%)
:3.3V +/-10%)
=1.8V/2.7V/3.3V, f=1.0MHz)
RE
Symbol
H
H
H
H
H
H
X
X
X
X
C
C
I/O
IN
Spare Array
Main Array
0V/V
WP
1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
X
X
H
H
H
X
X
H
H
L
CC
(2)
K9K1G08R0B
Test Condition
During Read(Busy) on the devices
Data Input
Data Output
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
0V to Vcc
Vcc
V
Read Mode
Write Mode
V
5ns
IN
IL
-
Symbol
t
Q
=0V
=0V
PROG
t
t
/2
Nop
DBSY
BERS
11
Q
(1)
Command Input
Address Input(4clock)
Command Input
Address Input(4clock)
Min
-
-
-
-
Min
K9K1G08B0B
-
-
0V to Vcc
Vcc
5ns
-
Q
Mode
/2
Typ
200
Q
1
2
-
-
FLASH MEMORY
Max
20
20
1 TTL GATE and CL=100pF
Max
500
10
1
2
3
K9K1G08U0B
0.4V to 2.4V
Advance
1.5V
5ns
Unit
pF
pF
cycles
cycle
Unit
ms
µs
µs