K9K1G08U0B Samsung semiconductor, K9K1G08U0B Datasheet - Page 41

• Manufacturer Part Number: K9K1G08U0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.7V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at V
required before internal circuit gets ready for any command sequences as shown in Figure 23. The two step command sequence for
program/erase provides additional software protection.
Figure 23. AC Waveforms for Power Transition
WP
WE
V
CC
1.8V device : ~ 1.5V
2.7V device : ~ 2.0V
3.3V device : ~ 2.5V
10µs
High
IL
during power-up and power-down and recovery time of minimum 10µs is
41
FLASH MEMORY
1.8V device : ~ 1.5V
2.7V device : ~ 2.0V
3.3V device : ~ 2.5V
Advance