K9K1G08U0B Samsung semiconductor, K9K1G08U0B Datasheet - Page 8

• Manufacturer Part Number: K9K1G08U0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Memory Map
The device is arranged in eight 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks by dividing the memory
array into plane 0~3 or plane 4~7 separately. For example, multi-plane program/erase operations into plane 2,3,4 and 5 are prohib-
ited.
Figure 3. Memory Array Map
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
528byte Page Registers
528byte Page Registers
Block 4096
Block 0
Block 8188
Block 4092
(1024 Block)
(1024 Block)
Page 30
Page 31
Page 30
Page 30
Page 31
Page 31
Page 30
Page 31
Plane 4
Plane 0
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
528byte Page Registers
528byte Page Registers
Block 1
Block 4093
Block 4097
Block 8189
(1024 Block)
(1024 Block)
Page 30
Page 30
Page 31
Page 30
Page 31
Page 31
Page 30
Page 31
Page 0
Page 1
Plane 5
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Plane 1
8
528byte Page Registers
528byte Page Registers
Block 2
Block 4094
Block 4098
Block 8190
(1024 Block)
(1024 Block)
Page 30
Page 30
Page 31
Page 30
Page 31
Page 31
Page 30
Page 31
Page 0
Page 1
Plane 6
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Plane 2
FLASH MEMORY
528byte Page Registers
528byte Page Registers
Block 4099
Block 8191
Block 3
Block 4095
(1024 Block)
(1024 Block)
Page 30
Page 31
Page 30
Page 30
Page 31
Page 31
Page 30
Plane 7
Page 31
Page 0
Page 1
Plane 3
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
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