K9K1G08U0B Samsung semiconductor, K9K1G08U0B Datasheet - Page 39

• Manufacturer Part Number: K9K1G08U0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 25). Its value can be
determined by the following guidance.
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
V
CC
GND
Device
open drain output
R/B
Rp
Figure 22. Rp vs tr ,tf & Rp vs ibusy
ibusy
C
L
Ready Vcc
39
tf
1.8V device - V
2.7V device - V
3.3V device - V
VOL
OL
OL
OL
Busy
: 0.1V, V
: 0.4V, V
: 0.4V, V
FLASH MEMORY
OH
OH
OH
: Vcc
: Vcc
: 2.4V
Q
Q
-0.1V
-0.4V
tr
Advance
VOH