K9K1G08U0B Samsung semiconductor, K9K1G08U0B Datasheet - Page 9

• Manufacturer Part Number: K9K1G08U0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K1G08X0B-XCB0
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
Parameter
Symbol
V
V
V
CCQ
CC
SS
Parameter
K9K1G08X0B-XCB0
K9K1G08X0B-XIB0
K9K1G08X0B-XCB0
K9K1G08X0B-XIB0
SS
1.65
1.65
Min
0
K9K1G08R0B(1.8V)
CC,
Typ.
+0.3V which, during transitions, may overshoot to V
1.8
1.8
0
:
T
A
=0 to 70°C, K9K1G08X0B-XIB0
Max
1.95
1.95
0
Symbol
9
V
Min
2.5
2.5
V
T
T
0
IN/OUT
V
K9K1G08B0B(2.7V)
Ios
BIAS
CCQ
STG
CC
Typ.
2.7
2.7
0
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
1.8V Device
:
T
Max
2.9
2.9
A
0
=-40 to 85°C)
CC
+2.0V for periods <20ns.
-10 to +125
-40 to +125
-65 to +150
Rating
Min
2.7
2.7
0
FLASH MEMORY
K9K1G08U0B(3.3V)
5
2.7V/3.3V Device
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
Typ.
3.3
3.3
0
Advance
Max
3.6
3.6
0
Unit
mA
Unit
°C
°C
V
V
V
V