K9K1G08U0B Samsung semiconductor, K9K1G08U0B Datasheet - Page 40

• Manufacturer Part Number: K9K1G08U0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Rp value guidance
Rp(min, 1.8V part) =
Rp(min, 2.7V part) =
Rp(min, 3.3V part) =
where I
Rp(max) is determined by maximum permissible limit of tr
L
is the sum of the input currents of all devices tied to the R/B pin.
100n
100n
100n
200n
200n
300n
200n
300n
300n
V
V
V
CC
CC
CC
(Max.) - V
(Max.) - V
(Max.) - V
I
I
I
2.4
2.3
OL
OL
OL
1K
1.7
1K
1K
30
100
1.7
30
2.3
3.6
@ Vcc = 3.3V, Ta = 25
@ Vcc = 1.8V, Ta = 25
@ Vcc = 2.7V, Ta = 25
+ ΣI
+ ΣI
+ ΣI
40
Ibusy
Ibusy
Ibusy
OL
OL
OL
tf
tf
tf
L
L
L
tr
tr
tr
(Max.)
(Max.)
(Max.)
60
200
0.85
60
1.2
2K
2K
1.1
2K
3.6
1.7
2.3
Rp(ohm)
Rp(ohm)
Rp(ohm)
=
=
=
300
90
0.75
0.8
3K
3K
3K
3.6
1.7
2.3
90
°C , C
°C , C
°C , C
0.57
3mA + ΣI
3mA + ΣI
8mA + ΣI
1.85V
2.5V
3.2V
L
L
L
2.3
1.7
= 100pF
= 30pF
= 30pF
0.6
400
120
0.43
3.6
120
4K
4K
4K
L
L
L
FLASH MEMORY
0.55
2m
2m
3m
1m
2m
3m
1m
3m
1m
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