K9K1G08U0B Samsung semiconductor, K9K1G08U0B Datasheet - Page 22

• Manufacturer Part Number: K9K1G08U0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Page Program Operation
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
BLOCK ERASE OPERATION
CLE
CE
WE
ALE
RE
I/O
R/B
CLE
CE
WE
ALE
RE
I/O
R/B
0
0
~
~
7
7
Sequential Data
Input Command
Auto Block Erase Setup Command
80h
t
WC
t
60h
WC
Column
Address
A
A
9
0
~ A
~ A
16
7
Page(Row)
A
A
Address
9
17
~ A
~ A
16
(ERASE ONE BLOCK)
24
Page(Row)
A
Address
t
17
A
WC
25,
~ A
A
26
24
Erase Command
A
25,
DOh
A
26
1 up to 528 Byte Data
Serial Input
t
22
WB
Din
N
Busy
t
WC
527
Din
t
BERS
Program
Command
10h
t
WB
FLASH MEMORY
Read Status
Command
t
PROG
70h
I/O
I/O
0
0
Read Status
Command
I/O
I/O
=0 Successful Erase
=1 Error in Erase
Advance
I/O 0
0
0
=0 Successful Program
=1 Error in Program
70h
I/O
0