NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 15

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
Commands
Truth Tables 1a and 1b provide a reference of the commands supported by DDR SDRAM devices. A verbal description of each
commands follows.
Truth Table 1a: Commands
Truth Table 1b: DM Operation
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Name (Function)
Deselect (Nop)
No Operation (Nop)
Active (Select Bank And Activate Row)
Read (Select Bank And Column, And Start Read Burst)
Write (Select Bank And Column, And Start Write Burst)
Burst Terminate
Precharge (Deactivate Row In Bank Or Banks)
Auto Refresh Or Self Refresh (Enter Self Refresh Mode)
Mode Register Set
1. CKE is high for all commands shown except Self Refresh.
2. BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 = 0 selects
3. BA0-BA1 provide bank address and A0-A12 provide row address.
4. BA0, BA1 provide bank address; A0-Ai provide column address (where i = 9 for x8 and 9, 11 for x4); A10 high enables the Auto Pre-
5. A10 LOW: BA0, BA1 determine which bank is precharged.
6. This command is auto refresh if CKE is high; Self Refresh if CKE is low.
7. Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read bursts with Auto
9. Deselect and NOP are functionally interchangeable.
1. Used to mask write data; provided coincident with the corresponding data.
Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the op-code to be written to the selected Mode
Register.)
charge feature (non-persistent), A10 low disables the Auto Precharge feature.
A10 HIGH: all banks are precharged and BA0, BA1 are “Don’t Care.”
Precharge enabled or for write bursts
Name (Function)
Write Enable
Write Inhibit
CS
H
L
L
L
L
L
L
L
L
RAS
X
H
H
H
H
L
L
L
L
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
CAS
X
H
H
H
H
L
L
L
L
WE
X
H
H
H
H
L
L
L
L
Bank/Row
Bank/Col
Bank/Col
Op-Code
Address
Code
X
X
X
X
DM
H
L
AR / SR
Read
Write
MNE
NOP
NOP
MRS
ACT
PRE
BST
Valid
DQs
X
Notes
1, 6, 7
Notes
1, 9
1, 9
1, 3
1, 4
1, 4
1, 8
1, 5
1, 2
1
1
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