NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 20

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
Reads
Subsequent to programming the mode register with CAS latency, burst type, and burst length, Read bursts are initiated with a
Read command.
The starting column and bank addresses are provided with the Read command and Auto Precharge is either enabled or dis-
abled for that burst access. If Auto Precharge is enabled, the row that is accessed starts precharge at the completion of the
burst, provided t
disabled.
During Read bursts, the valid data-out element from the starting column address is available following the CAS latency after the
Read command. Each subsequent data-out element is valid nominally at the next positive or negative clock edge (i.e. at the
next crossing of CK and CK). The following timing figure entitled “Read Burst: CAS Latencies (Burst Length=4)” illustrates the
general timing for each supported CAS latency setting. DQS is driven by the DDR SDRAM along with output data. The initial low
state on DQS is known as the read preamble; the low state coincident with the last data-out element is known as the read post-
amble. Upon completion of a burst, assuming no other commands have been initiated, the DQs and DQS goes High-Z. Data
from any Read burst may be concatenated with or truncated with data from a subsequent Read command. In either case, a con-
tinuous flow of data can be maintained. The first data element from the new burst follows either the last element of a completed
burst or the last desired data element of a longer burst which is being truncated. The new Read command should be issued x
cycles after the first Read command, where x equals the number of desired data element pairs (pairs are required by the 2n
prefetch architecture). This is shown in timing figure entitled “Consecutive Read Bursts: CAS Latencies (Burst Length =4 or 8)”.
A Read command can be initiated on any positive clock cycle following a previous Read command. Nonconsecutive Read data
is shown in timing figure entitled “Non-Consecutive Read Bursts: CAS Latencies (Burst Length = 4)”. Full-speed Random Read
Accesses: CAS Latencies (Burst Length = 2, 4 or 8) within a page (or pages) can be performed as shown on page 25.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
t
RCD
Command
BA0, BA1
and t
A0-A12
CK
CK
RRD
RAS
has been satisfied. For the generic Read commands used in the following illustrations, Auto Precharge is
Definition
ROW
ACT
BA x
NOP
t
RRD
ROW
ACT
BA y
NOP
t
RCD
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
NOP
RD/WR
RD/WR
BA y
COL
NOP
Don’t Care
NOP
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