NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 28

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Read to Write: CAS Latencies (Burst Length = 4 or 8)
DO a-n = data out from bank a, column n
. DI a-b = data in to bank a, column b
1 subsequent elements of data out appear in the programmed order following DO a-n.
Data In elements are applied following Dl a-b in the programmed order, according to burst length.
Shown with nominal t
Command
Command
Address
Address
DQS
DQS
DQ
DM
DQ
DM
CK
CK
CK
CK
AC
, t
DQSCK
BAa, COL n
BAa, COL n
Read
Read
, and t
DQSQ
.
CL=2
BST
BST
CL=2.5
NOP
NOP
DOa-n
DOa-n
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
BAa, COL b
Write
NOP
DI a-b
BAa, COL b
t
DQSS
Write
NOP
CAS Latency = 2.5
CAS Latency = 2
(min)
Dla-b
t
DQSS
NOP
NOP
Don’t Care
(min)
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