IS42S16100E-6BLI-TR ISSI, IS42S16100E-6BLI-TR Datasheet - Page 26

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IS42S16100E-6BLI-TR

Manufacturer Part Number
IS42S16100E-6BLI-TR
Description
DRAM 16M 1Mx16 166Mhz SDRAM, 3.3v
Manufacturer
ISSI
Datasheet

Specifications of IS42S16100E-6BLI-TR

Rohs
yes
Data Bus Width
16 bit
Organization
1 Mbit x 16
Package / Case
BGA-60
Memory Size
16 Mbit
Maximum Clock Frequency
166 MHz
Access Time
6 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
180 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Factory Pack Quantity
1000
26
IS42S16100E, IS45S16100E
BANk SElECT AND PREChARGE ADDRESS AllOCATION
column
Row
X10
Y10
X11
Y11
X0
X1
X2
X3
X4
X5
X6
X7
X8
X9
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
0
1
0
1
0
1
0
1
Row address
Row address
Row address
Row address
Row address
Row address
Row address
Row address
Row address
Row address
Row address (active command)
precharge of the Selected Bank (precharge command)
precharge of Both Banks (precharge command)
Bank 0 Selected (precharge and active commands)
Bank 1 Selected (precharge and active commands)
column address
column address
column address
column address
column address
column address
column address
column address
don’t care
don’t care
auto-precharge - disabled
auto-precharge - enables
Bank 0 Selected (Read and Write commands)
Bank 1 Selected (Read and Write commands)
Integrated Silicon Solution, Inc. — www.issi.com
05/18/2010
Rev. E

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