IS42S16100E-6BLI-TR ISSI, IS42S16100E-6BLI-TR Datasheet - Page 29

• Manufacturer Part Number: IS42S16100E-6BLI-TR
• Description: DRAM 16M 1Mx16 166Mhz SDRAM, 3.3v
• Manufacturer: ISSI

Specifications of IS42S16100E-6BLI-TR

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 1 Mbit x 16
• Package / Case: BGA-60
• Memory Size: 16 Mbit
• Maximum Clock Frequency: 166 MHz
• Access Time: 6 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 3 V
• Maximum Operating Current: 180 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 1000

IS42S16100E, IS45S16100E
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
05/18/2010
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (t
precharge operation starts two clock periods after the last
burst data input.
CAS latency = 2, burstlength = 4
CAS latency = 3, burstlength = 4
COMMAND
COMMAND
CLK
CLK
DQ
DQ
Dal
WRITE WITH AUTO-PRECHARGE
WRITE WITH AUTO-PRECHARGE
) is t
rp
WRITE A0
WRITE A0
D
D
plus two CLK periods. That is, the
IN
IN
(BANK 0)
(BANK 0)
0
0
D
D
IN
IN
1
1
Dal
) between the
D
D
IN
IN
2
2
D
D
IN
IN
3
3
Therefore, the selected bank can be made active after a
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length
delay of t
is set to full page.
CAS Latency
Dal
t
Dal
.
PRECHARGE START
PRECHARGE START
t
t
t
t
DAL
DAL
RP
RP
2CLK
+t
3
rp
2CLK
+t
ACT 0
ACT 0
2
rp
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