STM32F215RGT6TR STMicroelectronics, STM32F215RGT6TR Datasheet - Page 122

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STM32F215RGT6TR

Manufacturer Part Number
STM32F215RGT6TR
Description
ARM Microcontrollers - MCU STM32F21 High-Perf M3 1Mb 120 MHz MCU
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F215RGT6TR

Product Category
ARM Microcontrollers - MCU
Core
ARM Cortex M3
Data Bus Width
32 bit

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Electrical characteristics
5.3.24
5.3.25
122/173
Embedded reference voltage
The parameters given in
temperature and V
Table 68.
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production.
FSMC characteristics
Asynchronous waveforms and timings
Figure 53
Table 72
with the following FSMC configuration:
In all timing tables, the
T
V
t
Symbol
V
S_vrefint
T
START
RERINT_s
Coeff
REFINT
(2)
AddressSetupTime = 1
AddressHoldTime = 1
DataSetupTime = 1
BusTurnAroundDuration = 0x0
(2)
(2)
(1)
provide the corresponding timings. The results shown in these tables are obtained
through
Internal reference voltage
ADC sampling time when
reading the internal reference
voltage
Internal reference voltage
spread over the temperature
range
Temperature coefficient
Startup time
Embedded internal reference voltage
Figure 56
DD
Parameter
supply voltage conditions summarized in
T
HCLK
Table 68
represent asynchronous waveforms and
is the HCLK clock period.
Doc ID 17050 Rev 8
are derived from tests performed under ambient
–40 °C < T
Conditions
V
DD
A
= 3 V
< +105 °C 1.18
Table
Min
10
-
-
-
11.
Table 69
1.21
Typ
30
3
6
-
STM32F21xxx
Max
1.24
50
10
through
5
-
ppm/°C
Unit
mV
µs
µs
V

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