STM32F215RGT6TR STMicroelectronics, STM32F215RGT6TR Datasheet - Page 90

• Manufacturer Part Number: STM32F215RGT6TR
• Description: ARM Microcontrollers - MCU STM32F21 High-Perf M3 1Mb 120 MHz MCU
• Manufacturer: STMicroelectronics

Specifications of STM32F215RGT6TR

• Product Category: ARM Microcontrollers - MCU
• Core: ARM Cortex M3
• Data Bus Width: 32 bit

Electrical characteristics
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Table 35.
1. Based on characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
Table 36.
t
t
t
t
ERASE128KB
t
t
ERASE128KB
ERASE16KB
ERASE64KB
ERASE16KB
ERASE64KB
Symbol
Symbol
V
V
t
t
t
prog
t
prog
ME
prog
ME
prog
Flash memory programming
Flash memory programming with V
Word programming time
Sector (16 KB) erase time
Sector (64 KB) erase time
Sector (128 KB) erase time
Mass erase time
Programming voltage
Double word programming
Sector (16 KB) erase time
Sector (64 KB) erase time
Sector (128 KB) erase time
Mass erase time
Programming voltage
Parameter
Parameter
Doc ID 17050 Rev 8
Program/erase parallelism
(PSIZE) = x 8/16/32
Program/erase parallelism
(PSIZE) = x 8
Program/erase parallelism
(PSIZE) = x 16
Program/erase parallelism
(PSIZE) = x 32
Program/erase parallelism
(PSIZE) = x 8
Program/erase parallelism
(PSIZE) = x 16
Program/erase parallelism
(PSIZE) = x 32
Program/erase parallelism
(PSIZE) = x 8
Program/erase parallelism
(PSIZE) = x 16
Program/erase parallelism
(PSIZE) = x 32
Program/erase parallelism
(PSIZE) = x 8
Program/erase parallelism
(PSIZE) = x 16
Program/erase parallelism
(PSIZE) = x 32
32-bit program operation
16-bit program operation
8-bit program operation
T
A
V
V
Conditions
= 0 to +40 °C
DD
PP
Conditions
= 8.5 V
= 3.3 V
PP
Min
2.7
-
-
-
-
-
Min
(1)
2.7
2.1
1.8
-
-
-
-
-
-
-
-
-
-
-
-
-
(1)
Typ
230
490
875
6.9
16
1200
Typ
400
300
250
700
550
-
1.3
16
16
11
2
1
8
-
-
-
STM32F21xxx
Max
100
Max
100
2400
1400
1100
3.6
800
600
500
2.6
3.6
3.6
3.6
32
22
16
-
-
-
-
4
2
(2)
(1)
(2)
(1)
Unit
Unit
ms
ms
ms
µs
µs
V
V
V
V
s
s
s