STM32F215RGT6TR STMicroelectronics, STM32F215RGT6TR Datasheet - Page 98

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STM32F215RGT6TR

Manufacturer Part Number
STM32F215RGT6TR
Description
ARM Microcontrollers - MCU STM32F21 High-Perf M3 1Mb 120 MHz MCU
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F215RGT6TR

Product Category
ARM Microcontrollers - MCU
Core
ARM Cortex M3
Data Bus Width
32 bit

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0
Electrical characteristics
Table 45.
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F20/21xxx reference manual for a
2. TBD stands for “to be defined”.
3. The maximum frequency is defined in
4. For maximum frequencies above 50 MHz, the compensation cell should be used.
98/173
OSPEEDRy
[1:0] bit
value
description of the GPIOx_SPEEDR GPIO port output speed register.
11
-
(1)
I/O AC characteristics
F
Figure 35. I/O AC characteristics definition
Symbol
max(IO)out
t
t
t
r(IO)out
EXTIpw
f(IO)out
Maximum frequency
Output high to low level fall
time
Output low to high level rise
time
Pulse width of external signals
detected by the EXTI
controller
EXT ERNAL
OUTPUT
ON 50pF
Maximum frequency is achieved if (t r + t f ) 2/3)T and if the duty cycle is (45-55%)
Parameter
Figure
(1)(2)
t r(I O)out
35.
(continued)
(3)
Doc ID 17050 Rev 8
10%
50%
when loaded by 50pF
C
C
C
C
C
C
C
C
L
L
L
L
L
L
L
L
90%
= 20 pF, 2.4 < V
= 20 pF, 2.4 < V
= 30 pF, V
= 30 pF, V
= 10 pF, V
= 10 pF, V
= 10 pF, V
= 10 pF, V
Conditions
T
DD
DD
DD >
DD >
DD >
DD >
10%
> 2.7 V
> 2.7 V
50%
2.70 V
1.8 V
2.70 V
1.8 V
DD
DD
90%
< 2.7 V
< 2.7 V
t r(I O)out
Min
10
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
STM32F21xxx
100
200
50
Max
TBD
TBD
TBD
TBD
TBD
ai14131
-
(4)
(4)
(4)
MHz
Unit
ns
ns

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