STM32F215RGT6TR STMicroelectronics, STM32F215RGT6TR Datasheet - Page 68

• Manufacturer Part Number: STM32F215RGT6TR
• Description: ARM Microcontrollers - MCU STM32F21 High-Perf M3 1Mb 120 MHz MCU
• Manufacturer: STMicroelectronics

Specifications of STM32F215RGT6TR

• Product Category: ARM Microcontrollers - MCU
• Core: ARM Cortex M3
• Data Bus Width: 32 bit

Electrical characteristics
5.3.6
68/173
Table 16.
1. The product behavior is guaranteed by design down to the minimum V
2. Guaranteed by design, not tested in production.
3. The reset temporization is measured from the power-on (POR reset or wakeup from V
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in
measurement
All Run mode current consumption measurements given in this section are performed using
CoreMark code.
T
RSTTEMPO
V
when first instruction is read by the user application code.
E
Symbol
BORhyst
I
V
V
V
RUSH
RUSH
BOR1
BOR2
BOR3
(2)
(2)
(2)
(2)(3)
Embedded reset and power control block characteristics (continued)
scheme.
Brownout level 1
threshold
Brownout level 2
threshold
Brownout level 3
threshold
BOR hysteresis
Reset temporization
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
Parameter
Doc ID 17050 Rev 8
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
V
I
RUSH
DD
= 1.8 V, T
= 171 mA for 31 µs
Conditions
A
= 105 °C,
Figure 17: Current consumption
POR/PDR
2.13
2.23
2.44
2.53
2.75
2.85
Min
0.5
value.
-
-
-
BAT
2.19
2.29
2.50
2.59
2.83
2.92
Typ
100
160
1.5
-
) to the instant
STM32F21xxx
Max
2.24
2.33
2.56
2.63
2.88
2.97
200
3.0
5.4
-
Unit
mV
mA
ms
µC
V
V
V
V
V