MCIMX6L3DVN10AA Freescale Semiconductor, MCIMX6L3DVN10AA Datasheet - Page 34

• Manufacturer Part Number: MCIMX6L3DVN10AA
• Description: Processors - Application Specialized i.MX6 Megrez
• Manufacturer: Freescale Semiconductor
• Type: Multimedia Applicationsr

Specifications of MCIMX6L3DVN10AA

• Rohs: yes
• Core: ARM Cortex A9
• Processor Series: i.MX6
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 1 GHz
• Data Ram Size: 128 KB
• Maximum Operating Temperature: + 95 C
• Mounting Style: SMD/SMT
• Package / Case: MAPBGA-432
• Interface Type: I2C, I2S, UART, USB
• Memory Type: L1/L2 Cache, ROM, SRAM
• Minimum Operating Temperature: 0 C
• Number Of Timers: 2

1
2
3
4
Electrical Characteristics
4.6.2
Table 22
operating ranges in
34
Sink current in Open Drain mode
Sink/source current in Push-Pull
mode
High-level output voltage
Low-level output voltage
High-Level DC input voltage
Low-Level DC input voltage
Input Hysteresis
Schmitt trigger VT+
Schmitt trigger VT–
Input current (no pull-up/down)
Input current (22 kΩ pull-up)
Input current (47 kΩ pull-up)
Input current (100 kΩ pull-up)
Input current (100 kΩ pull-down)
Keeper circuit resistance
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.6 V,
and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must be
controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other methods.
Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
DSE is the Drive Strength Field setting in the associated IOMUX control register.
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, Vil or Vih. Monotonic input transition time is from 0.1 ns to 1 s.
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
shows DC parameters for GPIO pads. The parameters in
Parameter
Parameter
Single Volatge General Purpose I/O (GPIO) DC Parameters
3, 4
3, 4
Table
1
1
i.MX 6SoloLite Applications Processors for Consumer Products, Rev. 1
1, 3
1, 3
9, unless otherwise noted.
Table 21. DVGPIO I/O DC Parameters (continued)
Symbol
Symbol
Rkeep
Iskod
Isspp
Vhys
VT+
VT–
Voh
Vol
Vih
Vil
Iin
Iin
Iin
Iin
Iin
Table 22. GPIO I/O DC Parameters
Ioh = -1 mA (DSE = 011, 100, 101, 110, 111)
Iol = 1mA (DSE = 011, 100, 101, 110, 111)
Ioh = -0.1 mA (DSE
Iol = 0.1 mA (DSE
Vin = 0.3 x OVDD
Vin = 0.7 x OVDD
Test Conditions
Test Conditions
Vin = OVDD or 0
OVDD = 3.3 V
Vin = OVDD
Vin = OVDD
Vin = OVDD
Vin= OVDD
Vin = 0 V
Vin = 0 V
Vin = 0 V
Vin = 0 V
—
—
—
—
—
—
2
2
= 001, 010)
= 001, 010)
Table 22
OVDD – 0.15
0.7
0.5
are guaranteed per the
-1.25
×
×
0.25
Min
Min
105
—
—
—
—
—
—
—
—
0
OVDD
OVDD
Freescale Semiconductor
0.3
0.5
OVDD
×
×
Max
Max
0.15
1.25
212
100
205
48
48
—
—
—
7
7
1
1
1
1
OVDD
OVDD
Unit
Unit
mA
mA
kΩ
μA
μA
μA
μA
μA
V
V
V
V
V
V
V