AT26F004-MU Atmel, AT26F004-MU Datasheet - Page 11
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AT26F004-MU
Manufacturer Part Number
AT26F004-MU
Description
IC FLASH 4MBIT 33MHZ 8QFN
Manufacturer
Atmel
Datasheet
1.AT26F004-MU.pdf
(38 pages)
Specifications of AT26F004-MU
Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
4M (2048 pages x 256 bytes)
Speed
33MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT26F004-MU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
8.3
3588D–DFLASH–10/08
Block Erase
A block of 4 Kbytes, 32 Kbytes, or 64 Kbytes can be erased (all bits set to the logical “1” state) in
a single operation by using one of three different opcodes for the Block Erase command. An
opcode of 20h is used for a 4-Kbyte erase, an opcode of 52h is used for a 32-Kbyte erase, and
an opcode of D8h is used for a 64-Kbyte erase. Before a Block Erase command can be started,
the Write Enable command must have been previously issued to the device to set the WEL bit of
the Status Register to a logical “1” state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h,
52h or D8h) must be clocked into the device. After the opcode has been clocked in, the three
address bytes specifying an address within the 4-Kbyte, 32-Kbyte, or 64-Kbyte block to be
erased must be clocked in. Any additional data clocked into the device will be ignored. When the
CS pin is deasserted, the device will erase the appropriate block. The erasing of the block is
internally self-timed and should take place in a time of t
Since the Block Erase command erases a region of bytes, the lower order address bits do not
need to be decoded by the device. Therefore, for a 4-Kbyte erase, address bits A11 - A0 will be
ignored by the device and their values can be either a logical “1” or “0”. For a 32-Kbyte erase,
address bits A14 - A0 will be ignored, and for a 64-Kbyte erase, address bits A15 - A0 will be
ignored by the device. Despite the lower order address bits not being decoded by the device, the
complete three address bytes must still be clocked into the device before the CS pin is deas-
serted; otherwise, the device will abort the operation and no erase operation will be performed.
If the address specified by A23 - A0 points to a memory location within a sector that is in the pro-
tected state, then the Block Erase command will not be executed, and the device will return to
the idle state once the CS pin has been deasserted. In addition, with the larger Block Erase
sizes of 32 Kbytes and 64 Kbytes, more than one physical sector may be erased (e.g. sectors
10, 9 and 8) at one time. Therefore, in order to erase a larger block that may span more than one
sector, all of the sectors in the span must be in the unprotected state. If one of the physical sec-
tors within the span is in the protected state, then the device will ignore the Block Erase
command and will return to the idle state once the CS pin is deasserted.
The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle
aborts due to an incomplete address being sent or because a memory location within the region
to be erased is protected.
While the device is executing a successful erase cycle, the Status Register can be read and will
indicate that the device is busy. For faster throughput, it is recommended that the Status Regis-
ter be polled rather than waiting the t
some point before the erase cycle completes, the WEL bit in the Status Register will be reset
back to the logical “0” state.
Figure 8-4.
SCK
CS
SO
SI
Block Erase
HIGH-IMPEDANCE
MSB
C
0
C
1
C
2
OPCODE
C
3
C
4
BLKE
C
5
C
6
time to determine if the device has finished erasing. At
C
7
MSB
A
8
A
9
A
10 11
A
ADDRESS BITS A23-A0
A
BLKE
12
A
.
A
26
A
27 28
A
A
29 30
A
A
AT26F004
31
11