VS-CPV363M4KPBF Vishay Semiconductors, VS-CPV363M4KPBF Datasheet

VS-CPV363M4KPBF

Manufacturer Part Number

VS-CPV363M4KPBF

Description

IGBT Transistors 600 Volt 6.0 Amp

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-CPV363M4FPBF.pdf (11 pages)

Specifications of VS-CPV363M4KPBF

Product Category

IGBT Transistors

Rohs

yes

Configuration

Hex

Collector- Emitter Voltage Vceo Max

600 V

Maximum Gate Emitter Voltage

20 V

Maximum Operating Temperature

+ 150 C

Package / Case

IMS-2-13

Continuous Collector Current Ic Max

11 A

Minimum Operating Temperature

- 40 C

Mounting Style

Through Hole

Current page: 1 of 11
Download datasheet (280Kb)

Document Number: 94485

Revision: 01-Sep-08

Collector to emitter voltage

Continuous collector current, each IGBT

Pulsed collector current

Clamped inductive load current

Diode continuous forward current

Diode maximum forward current

Short circuit withstand time

Gate to emitter voltage

Isolation voltage

Maximum power dissipation, each IGBT

Operating junction and

storage temperature range

Soldering temperature

Mounting torque

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

PARAMETER

RMS

Modulation depth (see fig. 1)

per phase (1.94 kW total)

at I

with T

Supply voltage

Power factor

CE(on)

= 6.0 A, 25 °C

(typical)

= 90 °C

IMS-2

(Short Circuit Rated Ultrafast IGBT)

For technical questions, contact: ind-modules@vishay.com

SYMBOL

6.7 A

360 Vdc

125 °C

, T

115 %

1.72 V

ISOL

CES

0.8

Stg

RMS

IGBT SIP Module

Repetitive rating; V

limited by maximum junction temperature

See fig. 20

L = 10 µH, R

See fig. 19

Any terminal to case, t = 1 minute

For 10 s, (0.063" (1.6 mm) from case)

6-32 or M3 screw

= 25 °C

= 100 °C

= 25 °C

= 100 °C

= 80 % (V

TEST CONDITIONS

CES

= 22 Ω

), V

FEATURES

• Short circuit rated ultrafast: Optimized for high

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay’s HPP advanced

line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar

transistor modules, while at the same time having the simpler

gate-drive requirements of the familiar power MOSFET. This

superior technology has now been coupled to a state of the

art materials system that maximizes power throughput with

low thermal resistance. This package is highly suited to

motor drive applications and where space is at a premium.

speed over 5.0 kHz (see fig. 1 for current vs.

frequency curve), and short circuit rated to 10 µs

at 125 °C, V

= 20 V, pulse width

= 20 V,

soft ultrafast diodes

Vishay High Power Products

= 15 V

- 40 to + 150

(0.55 to 0.8)

MAX.

5 to 7

CPV363M4KPbF

2500

± 20

600

300

6.0

6.1

www.vishay.com

UNITS

(N ⋅ m)

lbf ⋅ in

°C

µs

RMS

RoHS

COMPLIANT

Related parts for VS-CPV363M4KPBF

VS-CPV363M4KPBF Summary of contents

Page 1

... Revision: 01-Sep-08 IGBT SIP Module FEATURES • Short circuit rated ultrafast: Optimized for high speed over 5.0 kHz (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 µs at 125 °C, V • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • ...

Page 2

CPV363M4KPbF Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE in conduction Case to sink, flat, greased surface Weight of module ELECTRICAL SPECIFICATIONS (T ...

Page 3

SWITCHING CHARACTERISTICS (T PARAMETER Total gate charge (turn-on) Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Total switching loss Short circuit withstand ...

Page 4

... T , Case Temperature (° 15V PULSE WIDTH 2 1.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) ° J Fig Typical Collector to Emitter Voltage vs. Junction Temperature Document Number: 94485 Revision: 01-Sep-08 150 ...

Page 5

... V = 400V 6. Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate to Emitter Voltage Document Number: 94485 Revision: 01-Sep-08 IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) 0.001 0. Rectangular Pulse Duration (sec SHORTED ce 100 60 80 Fig Typical Switching Losses vs. Junction Temperature For technical questions, contact: ind-modules@vishay ...

Page 6

... T = 150° 125° 25° 0.4 0.8 1.2 1.6 Forward Voltage Drop - V FM Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current For technical questions, contact: ind-modules@vishay.com 100 V = 20V 125°C J SAFE OPERATING AREA 100 V , Collector-to-Emitter Voltage (V) CE Fig ...

Page 7

... V = 200V 125° 25°C J 120 I = 24A 12A /dt - (A/µs) f Fig Typical Reverse Recovery Time vs. dI 100 V = 200V 125° 25° 24A 12A 6. /dt - (A/µs) f Fig Typical Recovery Current vs. dI ...

Page 8

CPV363M4KPbF Vishay High Power Products Same type device 430 µ Fig. 18a - Test Circuit for Measurements d(on) r d(off) 90% Vge ...

Page 9

L 1000 V 6000 µ 100 V Fig Clamped Inductive Load Test Circuit CIRCUIT CONFIGURATION 3 6 Dimensions Document Number: 94485 Revision: 01-Sep-08 IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) D.U. ...

Page 10

... IMS-2 (SIP) 62.43 (2.458) 53.85 (2.120 0.38 (0.015) 3.05 ± 0.38 1.27 (0.050) (0.120 ± 0.015 2.54 (0.100) 0.76 (0.030 IMS-2 Package Outline (13 Pins) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 7.87 (0.310) 5.46 (0.215) 1.27 (0.050) 0.51 (0.020) 6.10 (0.240) www.vishay.com 1 ...

Page 11

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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