VS-CPV363M4KPBF Vishay Semiconductors, VS-CPV363M4KPBF Datasheet - Page 8

• Manufacturer Part Number: VS-CPV363M4KPBF
• Description: IGBT Transistors 600 Volt 6.0 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-CPV363M4KPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: IMS-2-13
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole

CPV363M4KPbF
Vishay High Power Products
Fig. 18a - Test Circuit for Measurements of I
www.vishay.com
8
+Vge
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
of V
80 %
td(off)
Ic
CE
10% Vce
t1
Defining E
I
rr
, t
430 µF
d(on)
Vce
90% Vge
, t
Ic
off
r
, t
tf
, t
d(off)
d(off)
t2
Same type
, t
90% Ic
device as
, t
For technical questions, contact: [e-mail]
f
D.U.T.
D.U.T.
LM
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
f
Eoff =
, E
5% Ic
on
t0
, E
t1
Vce Ic dt
Vce ic dt
off(diode)
t1+5μS
(Short Circuit Rated
IGBT SIP Module
, t
Ultrafast IGBT)
rr
t1
, Q
rr
t2
,
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
Vcc
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Vpk
td(on)
DIODE REVERSE
RECOVERY ENERGY
10% +Vg
Ic
10% Ic
10% Vcc
tx
t1
Irr
Defining E
Vce
Defining E
tr
t3
5% Vce
trr
90% Ic
rec
on
, t
, t
GATE VOLTAGE D.U.T.
+Vg
rr
d(on)
, Q
DIODE RECOVERY
WAVEFORMS
t4
Document Number: 94485
Erec =
rr
, t
, I
10% Irr
r
rr
t2
Eon =
Qrr =
DUT VOLTAGE
AND CURRENT
Ipk
t3
Revision: 01-Sep-08
Vd id dt
Vd Ic dt
t4
t1
tx
Vce Ic dt
Vce ie dt
id dt
Ic dt
t2
trr
Ic
Vcc