VS-CPV363M4KPBF Vishay Semiconductors, VS-CPV363M4KPBF Datasheet - Page 3

• Manufacturer Part Number: VS-CPV363M4KPBF
• Description: IGBT Transistors 600 Volt 6.0 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-CPV363M4KPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: IMS-2-13
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole

Document Number: 94485
Revision: 01-Sep-08
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Short circuit withstand time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery current
Diode reverse recovery charge
Diode peak rate of fall of recovery
during t
b
For technical questions, contact: [e-mail]
SYMBOL
dI
(rec)M
t
t
t
t
C
Q
C
C
Q
d(on)
d(off)
E
E
d(on)
d(off)
t
Q
E
E
Q
SC
t
I
t
t
t
t
oes
res
on
off
ies
rr
rr
ge
gc
r
f
ts
r
f
ts
rr
g
/dt
J
(Short Circuit Rated
= 25 °C unless otherwise specified)
IGBT SIP Module
I
V
See fig. 8
T
I
V
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
V
V
T
I
V
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
V
V
ƒ = 1.0 MHz
T
T
T
T
T
T
T
T
C
C
C
CC
J
GE
CC
GE
J
GE
GE
CC
J
J
J
J
J
J
J
J
Ultrafast IGBT)
= 6 A
= 6.0 A, V
= 6.0 A, V
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 400 V
= 15 V, R
= 360 V, T
= 15 V, R
= 15 V, R
= 0 V
= 30 V
TEST CONDITIONS
CC
CC
G
G
G
See fig. 14
See fig. 15
See fig. 16
See fig. 17
J
= 480 V
= 480 V
= 23 Ω
= 23 Ω, V
= 23 Ω
= 125 °C
CPK
See fig. 7
I
V
dI/dt = 200 A/µs
F
R
< 500 V
= 12 A
= 200 V
Vishay High Power Products
MIN.
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CPV363M4KPbF
TYP.
0.28
0.10
0.39
0.60
107
161
244
740
100
220
180
120
7.4
9.3
3.5
5.6
61
27
55
24
92
54
24
42
80
80
-
MAX.
0.50
160
140
120
180
600
www.vishay.com
6.0
91
11
40
60
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
A/µs
nC
mJ
mJ
nC
pF
ns
µs
ns
ns
A
3