VS-CPV363M4KPBF Vishay Semiconductors, VS-CPV363M4KPBF Datasheet - Page 6

• Manufacturer Part Number: VS-CPV363M4KPBF
• Description: IGBT Transistors 600 Volt 6.0 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-CPV363M4KPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: IMS-2-13
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole

CPV363M4KPbF
Vishay High Power Products
www.vishay.com
6
1.5
1.2
0.9
0.6
0.3
0.0
0
R
T
V
V
Fig. 11 - Typical Switching Losses vs.
CC
GE
G
J
I , Collector-to-emitter Current (A)
C
= 150 C
= 15V
= 23
= 0V
480V
Collector to Emitter Current
3
Ω
°
6
9
For technical questions, contact: [e-mail]
12
Fig. 13 - Maximum Forward Voltage Drop vs.
100
10
1
0.4
15
(Short Circuit Rated
Forward Voltage Drop - V
IGBT SIP Module
Instantaneous Forward Current
T = 150°C
T = 125°C
T = 25°C
Ultrafast IGBT)
J
J
J
0.8
1.2
1.6
FM
2.0
(V)
100
10
1
1
2.4
V
T
GE
J
V , Collector-to-Emitter Voltage (V)
CE
= 20V
= 125°C
Fig. 12 - Turn-Off SOA
SAFE OPERATING AREA
10
Document Number: 94485
100
Revision: 01-Sep-08
1000
A