VS-CPV363M4KPBF Vishay Semiconductors, VS-CPV363M4KPBF Datasheet - Page 5

• Manufacturer Part Number: VS-CPV363M4KPBF
• Description: IGBT Transistors 600 Volt 6.0 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-CPV363M4KPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: IMS-2-13
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole

Document Number: 94485
Revision: 01-Sep-08
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
1500
1200
20
16
12
900
600
300
8
4
0
0
0
V
1
I
CC
C
0.01
= 400V
= 6.0A
0.1
10
0.00001
V
1
Q , Total Gate Charge (nC)
CE
G
20
D = 0.50
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
C ies
C oes
C res
0.02
0.01
0.20
0.10
0.05
=
=
=
=
0V,
C
C
C
ge
gc
ce
(THERMAL RESPONSE)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
40
+ C
+ C
SINGLE PULSE
10
0.0001
f = 1MHz
gc ,
gc
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C
ce
60
SHORTED
t , Rectangular Pulse Duration (sec)
0.001
1
(Short Circuit Rated
80
100
IGBT SIP Module
Ultrafast IGBT)
0.01
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Notes:
1. Duty factor D = t / t
2. Peak T = P
0.1
1.0
0.8
0.6
0.4
0.2
0.0
10
0.1
1
-60 -40 -20
0
R
V
V
V
V
T
I
Vishay High Power Products
GE
CC
J
C
G
CC
GE
J
= 15V
= 480V
= 23
= 480V
= 15V
= 25 C
= 6.0A
10Ω
DM
T , Junction Temperature ( C )
R , Gate Resistance (Ω)
10
J
R
Ω
G
°
x Z
1
0
thJC
2
P
1
20 40
DM
+ T
20
CPV363M4KPbF
C
t
1
t
2
60
30
80 100 120 140 160
10
I = 12 A
I = 6 A
I = 3 A
C
C
C
°
40
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