VS-CPV363M4KPBF Vishay Semiconductors, VS-CPV363M4KPBF Datasheet - Page 9

no-image

VS-CPV363M4KPBF

Manufacturer Part Number
VS-CPV363M4KPBF
Description
IGBT Transistors 600 Volt 6.0 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-CPV363M4KPBF

Product Category
IGBT Transistors
Rohs
yes
Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Package / Case
IMS-2-13
Continuous Collector Current Ic Max
11 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
CIRCUIT CONFIGURATION
Document Number: 94485
Revision: 01-Sep-08
Dimensions
50 V
Fig. 19 - Clamped Inductive Load Test Circuit
6000 µF
100 V
1000 V
L
3
6
For technical questions, contact: ind-modules@vishay.com
Q1
Q2
V
C
7
LINKS TO RELATED DOCUMENTS
D1
D2
D.U.T.
(Short Circuit Rated
IGBT SIP Module
Ultrafast IGBT)
12
4
9
Q3
Q4
13
1
D3
D4
15
18
10
0 - 480 V
Q5
Q6
Fig. 20 - Pulsed Collector Current Test Circuit
19
http://www.vishay.com/doc?95066
Vishay High Power Products
D5
D6
16
CPV363M4KPbF
R
L
=
4 x I
480 V
www.vishay.com
C
at 25 °C
9

Related parts for VS-CPV363M4KPBF