VS-CPV363M4KPBF Vishay Semiconductors, VS-CPV363M4KPBF Datasheet - Page 4

• Manufacturer Part Number: VS-CPV363M4KPBF
• Description: IGBT Transistors 600 Volt 6.0 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-CPV363M4KPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: IMS-2-13
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole

CPV363M4KPbF
Vishay High Power Products
www.vishay.com
4
100
100
0.1
0.1
10
10
1
1
5
1
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
T = 150 C
J
V
V
12
10
CE
GE
8
6
4
2
0
0.1
o
, Collector-to-Emitter Voltage (V)
, Gate-to-Emitter Voltage (V)
T = 25 C
J
T = 25 C
J
o
o
10
V
20μs PULSE WIDTH
V
5μs PULSE WIDTH
GE
CC
T = 150 C
J
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= 15V
= 50V
o
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
1
10
15
(Short Circuit Rated
IGBT SIP Module
Ultrafast IGBT)
f, Frequency (KHz)
RMS
of Fundamental)
Fig. 4 - Maximum Collector Current vs. Case Temperature
10
3.0
2.0
1.0
12
Fig. 5 - Typical Collector to Emitter Voltage vs.
9
6
3
0
25
-60 -40 -20
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
V
80 us PULSE WIDTH
GE
= 15V
T , Case Temperature (°C)
50
C
T , Junction Temperature ( C)
J
Junction Temperature
0
20
75
40
60
100
Document Number: 94485
100
80 100 120 140 160
0.00
0.58
2.92
1.17
3.50
2.33
1.75
I =
I =
I =
C
C
C
V
Revision: 01-Sep-08
125
GE
12
°
6
3
A
A
A
= 15V
150