MT48H4M16LFB4-8:H Micron Technology Inc, MT48H4M16LFB4-8:H Datasheet - Page 20

• Manufacturer Part Number: MT48H4M16LFB4-8:H
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-8:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 9:
Figure 10:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
READ Command
Consecutive READ Bursts
Note:
BA0, BA1
Command
Command
Address
Address
Address
CAS#
CLK
CLK
RAS#
DQ
DQ
Each READ command may be issued to any bank. DQM is LOW.
WE#
A10
CKE
CLK
CS#
T0
T0
Bank,
READ
Bank,
READ
Col n
Col n
CL = 2
HIGH
CL = 3
T1
T1
NOP
NOP
T2
T2
NOP
NOP
D
Disable auto precharge
Enable auto precharge
OUT
n
T3
T3
Column
Address
Address
NOP
NOP
Bank
20
D
n + 1
D
OUT
n
OUT
Transitioning Data
T4
T4
READ
READ
Bank,
Col b
Bank,
Col b
Don’t Care
X = 1 cycle
D
n + 2
n + 1
D
OUT
OUT
X = 2 cycles
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
T5
NOP
NOP
n + 2
n + 3
D
D
OUT
OUT
64Mb: 4 Meg x 16 Mobile SDRAM
T6
T6
NOP
NOP
n + 3
D
D
OUT
OUT
b
Don’t Care
T7
NOP
D
OUT
b
©2006 Micron Technology, Inc. All rights reserved.
Operations