MT48H4M16LFB4-8:H Micron Technology Inc, MT48H4M16LFB4-8:H Datasheet - Page 56

• Manufacturer Part Number: MT48H4M16LFB4-8:H
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-8:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 43:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
A0–A9, A11
Command
BA0, BA1
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
Row
Row
Bank
t CKH
WRITE – Without Auto Precharge
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, the BL = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. A8, A9, and A11 = “Don’t Care.”
Disable auto precharge
t CMS
t CL
quency.
t DS
Column m 3
WRITE
Bank
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
56
IN
m + 3> and the PRECHARGE command, regardless of fre-
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
64Mb: 4 Meg x 16 Mobile SDRAM
NOP
T6
2
PRECHARGE
Single bank
All banks
Bank
T7
©2006 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
Timing Diagrams
ACTIVE
Row
Row
Bank
Don’t Care
T9