PBSS5160V T/R NXP Semiconductors, PBSS5160V T/R Datasheet

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PBSS5160V T/R

Manufacturer Part Number
PBSS5160V T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS5160V T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
80 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
220 MHz
Dc Collector/base Gain Hfe Min
200 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SS-Mini
Continuous Collector Current
1 A
Maximum Power Dissipation
500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PBSS5160V,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
package.
NPN complement: PBSS4160V.
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS5160V
60 V, 1 A PNP low V
Rev. 03 — 14 December 2009
Low collector-emitter saturation voltage V
High collector current capability I
High efficiency leading to less heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistors BCP52 and BCX52
Major application segments
Power management
Peripheral driver
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Automotive
Telecom infrastructure
Industrial
DC-to-DC conversion
Supply line switching
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
CEsat
C
(BISS) transistor
and I
Conditions
open base
I
I
C
B
= −100 mA
= −1 A;
CM
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
220
Product data sheet
Max
−60
−1
−2
330
Unit
V
A
A

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PBSS5160V T/R Summary of contents

Page 1

... NPN complement: PBSS4160V. 1.2 Features Low collector-emitter saturation voltage V High collector current capability I High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and BCX52 1.3 Applications Major application segments Automotive Telecom infrastructure Industrial ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number Package PBSS5160V 4. Marking Table 4. Type number PBSS5160V 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO ...

Page 3

... NXP Semiconductors [1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a FR4 PCB, single-sided copper, tin-plated (1) FR4 PCB (2) FR4 PCB; standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol R th(j-a) [1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 4

... NXP Semiconductors (1) th (K/W) (2) (3) ( (5) (6) (7) (8) 10 (9) (10) 1 −1 10 −5 − Mounted on FR4 PCB; standard footprint (1) δ (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ Fig 2. Transient thermal impedance as a function of pulse time; typical values ...

Page 5

... NXP Semiconductors 7. Characteristics Table 7. Characteristics ° unless otherwise specified. amb Symbol Parameter I collector-base cut-off current CBO I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat R equivalent on-resistance CEsat V base-emitter turn-on voltage ...

Page 6

... NXP Semiconductors 600 h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 3. DC current gain as a function of collector current; typical values −10 V CEsat (V) −1 −1 −10 (1) (2) (3) − ...

Page 7

... NXP Semiconductors −1.2 V BEsat (V) (1) −0.8 (2) (3) −0.4 0 −1 −10 −1 −10 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 7. Base-emitter saturation voltage as a function of collector current; typical values PBSS5160V_3 Product data sheet 001aaa722 − ...

Page 8

... NXP Semiconductors −2 (5) ( (A) −1.6 −1.2 −0.8 −0.4 0 −1 −2 − °C T amb = − − − − − − − − − − ...

Page 9

... NXP Semiconductors − − Fig 11. BISS transistor switching time definition oscilloscope = − −0 Bon Fig 12. Test circuit for switching times PBSS5160V_3 Product data sheet (probe) o 450 Ω ...

Page 10

... NXP Semiconductors 8. Package outline Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 Fig 13. Package outline SOT666 PBSS5160V_3 Product data sheet ...

Page 11

... NXP Semiconductors 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS5160V SOT666 [1] For further information and the availability of packing methods, see PBSS5160V_3 Product data sheet [1] Description 4 mm pitch tape and reel Section 12 ...

Page 12

... Table 9. Revision history Document ID Release date PBSS5160V_3 20091214 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 13 “Package outline PBSS5160V_2 20050404 PBSS5160V_1 ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Packing information . . . . . . . . . . . . . . . . . . . . 11 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Legal information 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 11 ...

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