PBSS5160V T/R NXP Semiconductors, PBSS5160V T/R Datasheet - Page 11

• Manufacturer Part Number: PBSS5160V T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160V T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 200 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5160V,115

NXP Semiconductors
9. Packing information
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
PBSS5160V_3
Product data sheet
Type number
PBSS5160V
For further information and the availability of packing methods, see
Packing methods
Package
SOT666
Description
4 mm pitch, 8 mm tape and reel
Rev. 03 — 14 December 2009
Section
[1]
12.
60 V, 1 A PNP low V
Packing quantity
3000
-115
PBSS5160V
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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