PBSS5160V T/R NXP Semiconductors, PBSS5160V T/R Datasheet - Page 9

• Manufacturer Part Number: PBSS5160V T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160V T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 200 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5160V,115

NXP Semiconductors
PBSS5160V_3
Product data sheet
Fig 11. BISS transistor switching time definition
Fig 12. Test circuit for switching times
V
CC
= −10 V; I
90 %
10 %
90 %
10 %
− I
− I
B
C
C
= −0.5 A; I
t
oscilloscope
d
Bon
t
on
= −0.025 A; I
V
t
r
I
(probe)
450 Ω
Rev. 03 — 14 December 2009
Boff
R1
= 0.025 A
R2
R
B
V
BB
R
C
V
CC
DUT
V
o
mgd624
− I
60 V, 1 A PNP low V
(probe)
Bon
450 Ω
t
− I
s
(100 %)
Boff
t
off
oscilloscope
input pulse
(idealized waveform)
output pulse
(idealized waveform)
t
f
PBSS5160V
− I
006aaa266
CEsat
C
(100 %)
© NXP B.V. 2009. All rights reserved.
t
(BISS) transistor
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