PBSS5160V T/R NXP Semiconductors, PBSS5160V T/R Datasheet - Page 5

• Manufacturer Part Number: PBSS5160V T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160V T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 200 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5160V,115

NXP Semiconductors
7. Characteristics
Table 7.
T
[1]
PBSS5160V_3
Product data sheet
Symbol
I
I
I
h
V
V
R
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
Rev. 03 — 14 December 2009
Conditions
V
V
T
V
V
V
V
V
I
I
I
I
I
I
V
I
I
I
f = 100 MHz
I
f = 1 MHz
C
C
C
C
C
C
Bon
Boff
C
E
j
CB
CB
CE
EB
CE
CE
CE
CC
= 150 °C
= −100 mA; I
= −500 mA; I
= −1 A; I
= −1 A; I
= −1 A; I
= −1 A; V
= −50 mA; V
= i
= 0.025 A
= −5 V; I
= −0.025 A;
= −60 V; I
= −60 V; I
= −60 V; V
= −5 V; I
= −5 V; I
= −5 V; I
= −10 V; I
e
= 0 A; V
B
B
B
CE
C
= −100 mA
= −50 mA
= −100 mA
C
C
C
E
E
C
CB
= 0 A
= −1 mA
= −500 mA
= −1 A
= −5 V
CE
BE
B
B
= 0 A
= 0 A;
= −0.5 A;
= −1 mA
= −50 mA
= −10 V;
= 0 V
= −10 V;
60 V, 1 A PNP low V
[1]
[1]
[1]
[1]
-
-
-
Min
-
-
-
-
200
150
100
-
-
-
-
-
-
-
-
-
150
-
PBSS5160V
205
Typ
-
-
-
-
350
250
160
−110
−120
−220
−0.95
220
−0.82
11
30
41
55
260
220
9
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
−100
−50
−100
−100
-
-
-
−160
−175
−330
−1.1
330
−0.9
-
-
-
-
-
-
-
15
Unit
nA
μA
nA
nA
mV
mV
mV
V
mΩ
V
ns
ns
ns
ns
ns
ns
MHz
pF
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