PBSS5160V T/R NXP Semiconductors, PBSS5160V T/R Datasheet - Page 3

• Manufacturer Part Number: PBSS5160V T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160V T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 200 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5160V,115

NXP Semiconductors
6. Thermal characteristics
PBSS5160V_3
Product data sheet
[1]
[2]
Table 6.
[1]
[2]
Symbol
R
Fig 1.
th(j-a)
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm
(1) FR4 PCB; 1 cm
(2) FR4 PCB; standard footprint
Power derating curves
Parameter
thermal resistance from
junction to ambient
Thermal characteristics
Rev. 03 — 14 December 2009
P
(W)
2
tot
collector mounting pad
0.6
0.4
0.2
0
0
40
Conditions
in free air
(2)
(1)
80
60 V, 1 A PNP low V
120
T
[1]
[2]
amb
001aaa714
Min
-
-
(°C)
2
2
collector mounting pad.
collector mounting pad.
160
PBSS5160V
CEsat
Typ
-
-
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
415
250
Unit
K/W
K/W
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