PBSS5160V T/R NXP Semiconductors, PBSS5160V T/R Datasheet - Page 12

• Manufacturer Part Number: PBSS5160V T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160V T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 200 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5160V,115

NXP Semiconductors
10. Revision history
Table 9.
PBSS5160V_3
Product data sheet
Document ID
PBSS5160V_3
Modifications:
PBSS5160V_2
PBSS5160V_1
Revision history
20040420
Release date
20091214
20050404
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 13 “Package outline
Rev. 03 — 14 December 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
SOT666”: updated
60 V, 1 A PNP low V
Change notice
-
-
-
PBSS5160V
Supersedes
PBSS5160V_2
PBSS5160V_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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