PBSS5160V T/R NXP Semiconductors, PBSS5160V T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS5160V T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160V T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 200 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5160V,115

NXP Semiconductors
PBSS5160V_3
Product data sheet
Fig 3.
Fig 5.
V
h
CEsat
−10
−10
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
400
200
−10
−1
−1
−2
−10
−10
0
V
DC current gain as a function of collector
current; typical values
I
Collector-emitter saturation voltage as a
function of collector current; typical values
C
−1
−1
CE
amb
amb
amb
amb
amb
amb
/I
B
= −5 V
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
−1
−1
−10
−10
(1)
(2)
(3)
(2)
−10
−10
(1)
(3)
2
2
−10
−10
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001aaa718
3
I
3
I
C
C
(mA)
(mA)
Rev. 03 — 14 December 2009
−10
−10
4
4
Fig 4.
Fig 6.
V
V
−10
−10
CEsat
(V)
(V)
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
−1.2
BE
−0.8
−0.4
−10
−1
−1
−2
−10
−10
0
V
Base-emitter voltage as a function of collector
current; typical values
T
Collector-emitter saturation voltage as a
function of collector current; typical values
C
C
C
−1
−1
amb
amb
amb
amb
CE
/I
/I
/I
60 V, 1 A PNP low V
B
B
B
= −5 V
= 100
= 50
= 10
= −55 °C
= 25 °C
= 100 °C
= 25 °C
−1
−1
−10
−10
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
PBSS5160V
2
2
CEsat
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
001aaa717
001aaa721
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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