MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 24

• Manufacturer Part Number: MT29F2G08ABAEAWP-IT:E
• Description: IC FLASH 2G 3.3V 2KBPG 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAWP-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Figure 16: READ/BUSY# Open Drain
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
driver enables multiple R/B# outputs to be OR-tied. Typically, R/B# is connected to an
interrupt pin on the system controller.
The combination of Rp and capacitive loading of the R/B# circuit determines the rise
time of the R/B# signal. The actual value used for Rp depends on the system timing re-
quirements. Large values of Rp cause R/B# to be delayed significantly. Between the 10%
and 90% points on the R/B# waveform, the rise time is approximately two time con-
stants (TC).
Where R = Rp (resistance of pull-up resistor), and C = total capacitive load.
The fall time of the R/B# signal is determined mainly by the output impedance of the
R/B# signal and the total load capacitance. Approximate Rp values using a circuit load
of 100pF are provided in Figure 21 (page 27).
The minimum value for Rp is determined by the output drive capability of the R/B#
signal, the output voltage swing, and V
Where Σ
V
V
CC
SS
IL
is the sum of the input currents of all devices tied to the R/B# pin.
I
Rp =
OL
V
Device
CC
(MAX) - V
I
OL
TC = R × C
24
R/B#
Open drain output
+ Σ
OL
IL
Asynchronous Interface Bus Operation
Rp
(MAX)
CC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
.
2Gb: x8, x16 NAND Flash Memory
© 2009 Micron Technology, Inc. All rights reserved.