MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 35

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MT29F2G08ABAEAWP-IT:E

Manufacturer Part Number
MT29F2G08ABAEAWP-IT:E
Description
IC FLASH 2G 3.3V 2KBPG 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAWP-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

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0
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Table 7: READ ID Parameters for Address 00h (Continued)
Table 8: READ ID Parameters for Address 20h
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Internal ECC
Byte value
Byte
0
1
2
3
4
Undefined
Options
“O”
“N”
“F”
“I”
Note:
Note:
I/07
1. b = binary; h = hexadecimal.
1. h = hexadecimal.
0
0
0
0
X
Options
ECC disabled
ECC enabled
MT29F2G08ABBEA
MT29F2G16ABBEA
MT29F2G08ABAEA
MT29F2G16ABAEA
I/06
X
1
1
1
1
I/05
X
0
0
0
0
I/07
0
1
0
0
0
0
35
I/04
X
0
0
0
0
I/06
0
0
0
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I/05
I/03
0
0
0
0
2Gb: x8, x16 NAND Flash Memory
X
1
1
0
1
I/04
0
0
0
0
I/02
READ ID Parameter Tables
1
1
1
0
X
I/03
0
0
0
0
I/02
I/01
1
1
1
1
© 2009 Micron Technology, Inc. All rights reserved.
X
1
1
1
0
I/01
1
1
1
1
I/00
X
1
0
0
1
I/00
0
0
0
0
Value
Value
XXh
4Fh
4Eh
46h
49h
06h
06h
06h
06h
0b
1b
1
1

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