MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 93

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MT29F2G08ABAEAWP-IT:E

Manufacturer Part Number
MT29F2G08ABAEAWP-IT:E
Description
IC FLASH 2G 3.3V 2KBPG 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAWP-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

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Figure 71: TWO-PLANE PROGRAM PAGE with RANDOM DATA INPUT
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
R/B#
R/B#
I/Ox
I/Ox
80h
1
85h
Address (5 cycles)
1st-plane address
Unlimited number of repetitions
address than previous
5 address cycles, for
Different column
Address (2 cycles)
2nd plane only
Data
Data
input
input
85h
address than previous
Unlimited number of repetitions
5 address cycles, for
10h
Different column
Address (2 cycles)
1st plane only
t PROG
93
Data
input
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
11h
t DBSY
80h
2nd-plane address
Address (5 cycles)
Two-Plane Operations
© 2009 Micron Technology, Inc. All rights reserved.
Data
input
1

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