MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 82

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MT29F2G08ABAEAWP-IT:E

Manufacturer Part Number
MT29F2G08ABAEAWP-IT:E
Description
IC FLASH 2G 3.3V 2KBPG 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAWP-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

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Figure 62: BLOCK LOCK Flowchart
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
LOCK Cmd
WP# LOW
>100ns or
with invert area
UNLOCK Cmd
bit = 1
Locked tight range
Unlocked range
Unlocked range
Unlocked range
Unlocked range
Locked range
Entire NAND Flash
array locked tight
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
Entire NAND Flash
UNLOCK Cmd with invert area bit = 1
UNLOCK Cmd with invert area bit = 0
array locked
Power-up with
LOCK HIGH
UNLOCK Cmd with
invert area bit = 1
82
LOCK Cmd
WP# LOW
>100ns or
Power-up
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
Locked tight range
Locked-tight range
Unlocked range
Unlocked range
Locked range
Locked range
UNLOCK Cmd with
invert area bit = 0
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
Power-up with
LOCK LOW
(default)
BLOCK LOCK function
UNLOCK Cmd with
invert area bit = 0
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature
disabled

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