MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 77

• Manufacturer Part Number: MT29F2G08ABAEAWP-IT:E
• Description: IC FLASH 2G 3.3V 2KBPG 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAWP-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Figure 55: Flash Array Protected: Invert Area Bit = 0
Figure 56: Flash Array Protected: Invert Area Bit = 1
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Block 2047
Block 2046
Block 2045
Block 2044
Block 2043
Block 2042
Block 2041
Block 2040
Block 2039
Block 0002
Block 0001
Block 0000
Block 2047
Block 2046
Block 2045
Block 2044
Block 2043
Block 2042
Block 2041
Block 2040
Block 2039
Block 0002
Block 0001
Block 0000
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. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
7FCh
7FCh
7F8h
7F8h
Upper block boundary
Lower block boundary
Upper block boundary
Lower block boundary
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
Unprotected
Protected
Protected
Unprotected
Protected
Unprotected
area
area
area
Area
area
area
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature