MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 77
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MT29F2G08ABAEAWP-IT:E
Manufacturer Part Number
MT29F2G08ABAEAWP-IT:E
Description
IC FLASH 2G 3.3V 2KBPG 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F2G08ABAEAWP-ITE.pdf
(125 pages)
Specifications of MT29F2G08ABAEAWP-IT:E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F2G08ABAEAWP-IT:E
Manufacturer:
TI
Quantity:
12 000
Company:
Part Number:
MT29F2G08ABAEAWP-IT:E
Manufacturer:
MICRON611
Quantity:
60
Part Number:
MT29F2G08ABAEAWP-IT:E
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT29F2G08ABAEAWP-IT:E TR
Manufacturer:
MICRON原装
Quantity:
20 000
Part Number:
MT29F2G08ABAEAWP-IT:ETR
Manufacturer:
MICRON
Quantity:
20 000
Figure 55: Flash Array Protected: Invert Area Bit = 0
Figure 56: Flash Array Protected: Invert Area Bit = 1
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Block 2047
Block 2046
Block 2045
Block 2044
Block 2043
Block 2042
Block 2041
Block 2040
Block 2039
Block 0002
Block 0001
Block 0000
Block 2047
Block 2046
Block 2045
Block 2044
Block 2043
Block 2042
Block 2041
Block 2040
Block 2039
Block 0002
Block 0001
Block 0000
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
7FCh
7FCh
7F8h
7F8h
Upper block boundary
Lower block boundary
Upper block boundary
Lower block boundary
77
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
Unprotected
Protected
Protected
Unprotected
Protected
Unprotected
area
area
area
Area
area
area
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature