MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 32

• Manufacturer Part Number: MT29F2G08ABAEAWP-IT:E
• Description: IC FLASH 2G 3.3V 2KBPG 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAWP-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Reset Operations
RESET (FFh)
Figure 23: RESET (FFh) Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
The RESET command is used to put the memory device into a known condition and to
abort the command sequence in progress.
READ, PROGRAM, and ERASE commands can be aborted while the device is in the busy
state. The contents of the memory location being programmed or the block being
erased are no longer valid. The data may be partially erased or programmed, and is inva-
lid. The command register is cleared and is ready for the next command. The data
register and cache register contents are marked invalid.
The status register contains the value E0h when WP# is HIGH; otherwise it is written
with a 60h value. R/B# goes LOW for
command register.
The RESET command must be issued to all CE#s as the first command after power-on.
The device will be busy for a maximum of 1ms.
Cycle type
I/O[7:0]
R/B#
Command
FF
32
t
RST after the RESET command is written to the
t
WB
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
t
RST
© 2009 Micron Technology, Inc. All rights reserved.
Reset Operations