MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 26

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MT29F2G08ABAEAWP-IT:E

Manufacturer Part Number
MT29F2G08ABAEAWP-IT:E
Description
IC FLASH 2G 3.3V 2KBPG 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAWP-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

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Figure 19: I
Figure 20: I
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
OL
OL
vs. Rp (1.8V V
vs. Rp (V
CC
I (mA)
I (mA)
= 3.3V V
CC
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
)
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
CC
0
0
)
2000
2000
26
400 0
4000
Asynchronous Interface Bus Operation
6000
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
Rp (Ω)
Rp (Ω)
6000
8000
8000
I
10,000
OL
at V
© 2009 Micron Technology, Inc. All rights reserved.
CC
I
(MAX)
10,000
OL
12,000
at V
CC
(MAX)
12,000

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