MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 115

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 46:
I
Table 47:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
I
Speed Grade
CL (I
t
t
t
t
t
t
t
t
t
t
t
-5E
-37E
-3
-3E
-25
-25E
DD
DD
RCD (I
RC (I
RRD (I
RRD (I
CK (I
RAS MIN (I
RAS MAX (I
RP (I
RFC (I
FAW (1KB) (I
FAW (2KB) (I
Parameter
DD
7 Conditions
DD
DD
DD
DD
)
DD
DD
DD
)
)
)
)
)
) - x4/x8 (1KB)
) - x16 (2KB)
DD
DD
DD
DD
General I
I
All bank interleave READ operation
)
DD
)
)
)
A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
7 Timing Patterns (4-bank)
Notes:
DD
The detailed timings are shown below for I
parameter changes are made to the specification. Where general I
Table 46 on page 115 conflict with pattern requirements of Table 47, then Table 47
requirements take precedence.
1. A = active; RA = read auto precharge; D = deselect.
2. All banks are being interleaved at minimum
3. Control and address bus inputs are STABLE during DESELECTs.
4. I
Parameters
70,000
BL = 4.
-25E
OUT
12.5
57.5
12.5
105
7.5
2.5
10
45
35
45
5
= 0mA.
70,000
105
-25
7.5
2.5
15
60
10
45
15
35
45
6
I
DD
7 Timing Patterns for x4/x8/x16
70,000
115
37.5
105
-3E
7.5
12
57
10
45
12
50
4
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
70,000
DD
37.5
105
7.5
15
60
10
45
15
50
-3
5
3
t
RC (I
512Mb: x4, x8, x16 DDR2 SDRAM
7. Changes will be required if timing
DD
) without violating
70,000
-37E
3.75
37.5
105
7.5
15
60
10
45
15
50
4
©2004 Micron Technology, Inc. All rights reserved.
DD
I
70,000
DD
37.5
parameters in
105
-5E
7.5
15
55
10
40
15
50
t
3
5
RRD (I
7 Conditions
DD
) using a
Units
t
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns