MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 70

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 52:
Figure 53:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
PRECHARGE Command to Power-Down Entry
LOAD MODE Command to Power-Down Entry
Notes:
Notes:
COMMAND
1. The earliest precharge power-down entry may occur is at T2, which is 1 x
COMMAND
1. The earliest precharge power-down entry is at T3, which is after
2. All banks must be in the precharged state and
3. Valid address for LM command includes MR, EMR, EMR(2), and EMR(3) registers.
ADDRESS
ADDRESS
CHARGE command. Precharge power-down entry occurs prior to
CK#
CKE
CK#
A10
CKE
CK
CK
VALID
VALID
T0
T0
t RP 2
PRECHARGE
SINGLE BANK
ALL BANKS
VALID
VALID 3
T1
LM
T1
vs
70
1 x
t
CK
Power-down
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t MRD
entry
NOP
T2
NOP
T2
512Mb: x4, x8, x16 DDR2 SDRAM
t
1
RP met prior to issuing LM command.
t
CKE (MIN)
Power-down 1
T3
entry
NOP
T3
DON’T CARE
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Power-Down Mode
t
t
MRD is satisfied.
RP (MIN) being satisfied.
t CKE (MIN)
t
CK after the PRE-
T4
DON’T CARE