MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 69
MT47H64M8CB-3:B
Manufacturer Part Number
MT47H64M8CB-3:B
Description
IC DDR2 SDRAM 512MBIT 3NS 60FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H64M8CB-5EB.pdf
(133 pages)
Specifications of MT47H64M8CB-3:B
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H64M8CB-3:B
Manufacturer:
MICRON
Quantity:
12 388
Company:
Part Number:
MT47H64M8CB-3:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT47H64M8CB-3:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 50:
Figure 51:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
REFRESH Command to Power-Down Entry
ACTIVE Command to Power-Down Entry
Notes:
Notes:
COMMAND
1. The earliest precharge power-down entry may occur is at T2 which is 1 x
COMMAND
1. The earliest active power-down entry may occur is at T2, which is 1 x
ADDRESS
REFRESH command. Precharge power down entry occurs prior to
command. Active power-down entry occurs prior to
CK#
CKE
CK#
CKE
CK
CK
VALID
VALID
T0
T0
REFRESH
69
ACTIVE
VALID
T1
T1
1 t CK
1 x
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CK
Power-down
Power-down
512Mb: x4, x8, x16 DDR2 SDRAM
entry
entry
NOP
NOP
T2
T2
t
RCD (MIN) being satisfied.
1
1
t
t CKE (MIN)
CKE (MIN)
©2004 Micron Technology, Inc. All rights reserved.
Power-Down Mode
T3
T3
t
RFC (MIN) being satisfied.
t
CK after the ACTIVE
DON’T CARE
DON’T CARE
t
CK after the
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