MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 75

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 56:
MRS Command to ODT Update Delay
Figure 57:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
CKE
Applicable modes
Applicable timing parameters
t
AOND/
Any mode except
self refresh mode
Synchronous
ODT Timing for Entering and Exiting Power-Down Mode
Timing for MRS Command to ODT Update Delay
t
AOFD
Notes:
During normal operation, the value of the effective termination resistance can be
changed with an EMRS set command.
R
1. LM command directed to mode register, which updates the information in EMR(1)[A6, A2],
2. To prevent any impedance glitch on the channel, the following conditions must be met:
TT
Internal
Setting
i.e., R
t
duration of the
AOFD must be met before issuing the LM command; ODT must remain LOW for the entire
1
ODT 2
st
CMD
CK#
t
CKE latched LOW
ANPD (3
CK
TT
(nominal).
t
CKs)
Old Setting
Active power-down slow (asynchronous)
Precharge power-down (asynchronous)
Active power-down fast (synchronous)
t
t AOFD
MOD window, until
t
AONPD/
t
AOND/
EMRS
Synchronous or
t
Asynchronous
t
AOFPD (asynchronous)
AOFD (synchronous)
1
0ns
75
NOP
t
MOD is met.
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MOD (MAX) updates the R
t MOD
1
Undefined
st
512Mb: x4, x8, x16 DDR2 SDRAM
CKE latched HIGH
NOP
t
AXPD (8
t
CKs)
NOP
©2004 Micron Technology, Inc. All rights reserved.
Any mode except
self refresh mode
t
AOND/
Synchronous
TT
t IS
2
NOP
setting.
t
AOFD
ODT Timing
New Setting
NOP