MT48H16M32LFCM-75 IT:A TR Micron Technology Inc, MT48H16M32LFCM-75 IT:A TR Datasheet - Page 25

• Manufacturer Part Number: MT48H16M32LFCM-75 IT:A TR
• Description: IC SDRAM 512MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-75 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 95mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1329-2

Figure 12:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
Consecutive READ Bursts
Notes:
1. Each READ command may be to any bank. DQM is LOW.
COMMAND
COMMAND
ADDRESS
ADDRESS
CLK
CLK
DQ
DQ
T0
BANK,
T0
COL n
BANK,
COL n
READ
READ
CL = 2
T1
T1
NOP
NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
CL = 3
25
T2
T2
NOP
NOP
D
OUT
n
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T3
T3
NOP
NOP
D
D
n + 1
OUT
OUT
n
T4
T4
BANK,
READ
BANK,
READ
COL b
COL b
X = 1 cycle
D
n + 2
D
n + 1
OUT
OUT
X = 2 cycles
T5
T5
NOP
NOP
D
n + 2
D
n + 3
OUT
OUT
©2005 Micron Technology, Inc. All rights reserved.
T6
T6
NOP
NOP
D
n + 3
D
OUT
OUT
b
DON’T CARE
Operations
T7
NOP
D
OUT
b