MT48H16M32LFCM-75 IT:A TR Micron Technology Inc, MT48H16M32LFCM-75 IT:A TR Datasheet - Page 70

• Manufacturer Part Number: MT48H16M32LFCM-75 IT:A TR
• Description: IC SDRAM 512MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-75 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 95mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1329-2

Figure 53:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
COMMAND
BA0, BA1
ADDR
DQM
CLK
CKE
A10
DQ
t CKS
t CMS
WRITE – Continuous-Page Burst
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
Notes:
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
1.
2. Page left open; no
T1
NOP
t
t CH
WR must be satisfied prior to PRECHARGE command.
t CMS
t CK
t DS
COLUMN m
D
T2
WRITE
BANK
IN
t CMH
m
t DH
t
RP.
t DS
D
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
IN
T3
NOP
m + 1
t DH
70
t DS
D
IN
T4
NOP
m + 2
All locations within same row
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
IN
T5
NOP
m + 3
t DH
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t DS
Tn + 1
D
IN
NOP
m - 1
t DH
Full-page burst does
not self-terminate. Can
use BURST TERMINATE
command to stop.
©2005 Micron Technology, Inc. All rights reserved.
Timing Diagrams
BURST TERM
Tn + 2
DON’T CARE
1, 2
Tn + 3
NOP