MT48H16M32LFCM-75 IT:A TR Micron Technology Inc, MT48H16M32LFCM-75 IT:A TR Datasheet - Page 39

• Manufacturer Part Number: MT48H16M32LFCM-75 IT:A TR
• Description: IC SDRAM 512MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-75 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 95mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1329-2

Figure 32:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
READ With Auto Precharge Interrupted by a WRITE
Notes:
Internal
States
1. DQM is HIGH at T2 to prevent D
COMMAND
ADDRESS
BANK m
BANK n
DQM
CLK
DQ
1
Active
Page
READ - AP
BANK n,
BANK n
COL a
T0
READ with Burst of 4
Page Active
T1
NOP
CL = 3 (bank n)
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T2
39
NOP
OUT
a + 1 from contending with D
T3
D
NOP
OUT
a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK m,
WRITE - AP
COL d
BANK m
T4
D
d
IN
Interrupt Burst, Precharge
WRITE with Burst of 4
T5
d + 1
NOP
D
IN
t
RP - BANK n
T6
d + 2
NOP
D
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IN
IN
d at T4.
DON’T CARE
T7
t WR - BANK m
d + 3
NOP
D
IN
Write-Back
Idle
Operations